Toshiba 2SA1943 Transistor, PNP, -15A
Original price was: ₹205.00.₹140.00Current price is: ₹140.00.
| Collector Base Voltage |
230 V
|
| Collector Emitter Voltage |
230 V
|
| Emitter Base Voltage |
-5 V
|
| Collector Current |
-15 V
|
| Collector Dissipation |
150 W
|
| Current Gain |
55 – 160
|
| Transition Frequency |
30 Hz
|
| Minimum Order Quantity |
50
|
Power Amplifier Applications:
- High collector voltage VCEO = −230 V (min)
- Complementary to 2SC5200
- Recommended for 100-W high-fidelity audio frequency amplifier output stage.
The Toshiba 2SA1943 is a high-power, high-performance PNP transistor commonly used in audio amplifier circuits. Below are its detailed specifications:
Specifications:
- Type: PNP Bipolar Junction Transistor (BJT)
- Maximum Collector-Emitter Voltage (Vce): -230V
- Maximum Collector Current (Ic): -15A
- Power Dissipation (Pc): 150W
- DC Current Gain (hFE): Typically 55-160 (depends on operating conditions)
- Base-Emitter Voltage (Vbe): -1.5V (maximum)
- Transition Frequency (fT): 30 MHz
- Package Type: TO-3P
- Operating Temperature Range: -55°C to 150°C
Features:
- High power dissipation (150W)
- Excellent linearity, making it suitable for audio amplification
- High collector current capability (-15A), suitable for demanding applications
- Complementary to the 2SC5200 (NPN transistor), often used together in push-pull amplifier designs
Applications:
- High-power audio amplifiers
- Motor control circuits
- General-purpose high-power switching
- Signal processing in industrial systems
Notes:
- Ensure proper heat sinking due to high power dissipation.
- Toshiba’s 2SA1943 is a popular choice for high-quality audio amplifier designs due to its low distortion and reliability.
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Transistor Polarity NPN Collector-Base Voltage (VCBO) 230V Collector-Emitter Voltage (VCEO) 230V Emitter-Base Voltage (VEBO) 5V Continuous Collector Current (IC) 15A Base Current (IB) 1.5A Transition Frequency (fT) 30MHz DC Current Gain (hFE) 55-160 Operating Temperature Range -55 – 150°C Power Dissipation (PD) 150W
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